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HZ-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
ADE-208-118A(Z) Rev. 1 Nov. 1996 Features
* Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. * Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. * Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ordering Information
Type No. HZ-L Series Mark Type No. Package Code DO-35
Outline
1
2 Body color is orange Type No. Cathode band 1. Cathode 2. Anode
7 B2
HZ-L Series
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 175 -55 to +175 Unit mW C C
Electrical Characteristics
(Ta = 25C)
Zener Voltage VZ (V)* Type HZ6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ7L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ9L A1 A2 A3 Note: Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1
1
Reverese Current Test Condition IR (A) Max 1 Test Condition VR (V) 2.0
Dynamic Resistance rd () Max 150 Test Condition IZ (mA) 0.5
Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5
IZ (mA) 0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
0.5
1
6.0
60
0.5
1. Tested with DC.
Rev.1, Nov. 1996, page 2 of 7
HZ-L Series
Zener Voltage VZ (V)* Type HZ9L Grade B1 B2 B3 C1 C2 C3 HZ11L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ12L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ15L 1 2 3 HZ16L 1 2 3 Note: Min 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3
1
Reverese Current Test Condition IR (A) Max 1 Test Condition VR (V) 6.0
Dynamic Resistance rd () Max 60 Test Condition IZ (mA) 0.5
Max 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1
IZ (mA) 0.5
0.5
1
8.0
80
0.5
0.5
1
10.5
80
0.5
0.5
1
13.0
80
0.5
0.5
1
14.0
80
0.5
1. Tested with DC.
Rev.1, Nov. 1996, page 3 of 7
HZ-L Series
Zener Voltage VZ (V)* Type HZ18L Grade 1 2 3 HZ20L 1 2 3 HZ22L 1 2 3 HZ24L 1 2 3 HZ27L 1 2 3 HZ30L 1 2 3 HZ33L 1 2 3 HZ36L 1 2 3 Note: Note: Min 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4
1
Reverese Current Test Condition IR (A) Max 1 Test Condition VR (V) 15.0
Dynamic Resistance rd () Max 80 Test Condition IZ (mA) 0.5
Max 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0
IZ (mA) 0.5
0.5
1
18.0
100
0.5
0.5
1
20.0
100
0.5
0.5
1
22.0
120
0.5
0.5
1
24.0
150
0.5
0.5
1
27.0
200
0.5
0.5
1
30.0
250
0.5
0.5
1
33.0
300
0.5
1. Tested with DC. 2. Type No. is as follows; HZ6A1L, HZ6A2L, HZ36-3L
Rev.1, Nov. 1996, page 4 of 7
HZ-L Series
Main Characteristic
10-2
HZ12B2L HZ20-1L HZ16-2L HZ24-2L HZ6B2L HZ9B2L
10-3
Zener Current I Z (A)
HZ30-2L
10-4 10-5 10-6
10-7
10-8 0
5
10
15
20
25
30
35
HZ36-2L
40
Zener Voltage V Z (V) Fig.1 Zener current Vs. Zener voltage
0.10
(%/C)
50 %/C 40 30 mV/C 20 10 0 -10 -20 -30 -40 0 5 -50 10 15 20 25 30 35 40 Zener Voltage V Z (V)
Zener Voltage Temperature Coefficient z (mV/C)
500
l
2.5 mm 3 mm
0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10
400
Power Dissipation Pd (mW)
Printed circuit board 100 x180 x1.6t mm Quality: paper phenol
Zener Voltage Temperature Coefficient
z
300
l=5mm
200
l=10mm l=20mm (Publication value)
100
0 0 50 100 150 Ambient Temperature Ta (C) 200
Fig.2 Temperature Coefficient Vs. Zener voltage
Fig.3 Power Dissipation Vs. Ambient Temperature
Rev.1, Nov. 1996, page 5 of 7
HZ-L Series
Package Dimensions
Unit: mm
26.0 Min
4.2 Max
26.0 Min
0.5
1
2 Body color is orange Type No. (Navy blue) Cathode band (Navy blue)
Abbreviation of type name Type name without HZ *** L.
7 B2
2.0 Max
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) DO-35 DO-35 SC-48 0.13
7 B2
Zener voltage classification symbol equal to B1 or B3.
Expanded drawing of marking
Rev.1, Nov. 1996, page 6 of 7
HZ-L Series
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.1, Nov. 1996, page 7 of 7

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